Probing surface and interface morphology with grazing incidence small angle X-ray scattering

G Renaud, R Lazzari, F Leroy - Surface Science Reports, 2009 - Elsevier
Nanoscience and nanotechnology are tremendously increasing fields of research that aim at
producing, characterizing and understanding nanoobjects and assemblies of nanoobjects …

SiGe nanostructures

I Berbezier, A Ronda - Surface Science Reports, 2009 - Elsevier
Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Wafer direct bonding: From advanced substrate engineering to future applications in micro/nanoelectronics

SH Christiansen, R Singh, U Gosele - Proceedings of the IEEE, 2006 - ieeexplore.ieee.org
Wafer direct bonding refers to the process of adhesion of two flat mirror-polished wafers
without using any intermediate gluing layers in ambient air or vacuum at room temperature …

Bragg x-ray ptychography of a silicon crystal: Visualization of the dislocation strain field and the production of a vortex beam

Y Takahashi, A Suzuki, S Furutaku, K Yamauchi… - Physical Review B …, 2013 - APS
We experimentally demonstrate the visualization of nanoscale dislocation strain fields in a
thick silicon single crystal by a coherent diffraction imaging technique called Bragg x-ray …

Controlled surface nanopatterning with buried dislocation arrays

F Leroy, J Eymery, P Gentile, F Fournel - Surface science, 2003 - Elsevier
Self-assembled configurations of nanostructures are expected to play an increasing role in
devices design, as an alternative to conventional microelectronics. The key limitation is the …

Strain-Energy release in bent semiconductor nanowires occurring by polygonization or nanocrack formation

Z Sun, C Huang, J Guo, JT Dong, RF Klie, LJ Lauhon… - ACS …, 2019 - ACS Publications
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy
bandgap, and drive growth of self-assembled nanostructures. Understanding strain-energy …

Apparatus for real time in situ quantitative studies of growing nanoparticles by grazing incidence small angle X-ray scattering and surface differential reflectance …

G Renaud, M Ducruet, O Ulrich, R Lazzari - Nuclear Instruments and …, 2004 - Elsevier
This paper describes an experimental setup that was developed to simultaneously perform
grazing incidence small angle X-ray scattering (GISAXS) and surface differential reflectance …

Elastic relaxation in patterned and implanted strained silicon on insulator

S Baudot, F Andrieu, F Rieutord, J Eymery - Journal of Applied Physics, 2009 - pubs.aip.org
Mechanical relaxations of strained silicon on insulator (sSOI) nanostructures are studied for
the isolation and implantation processes used in transistor technology. Two model systems …

[HTML][HTML] Ultra High Precision Of The Tilt/Twist Misorientation Angles In Silicon/Silicon Direct Wafer Bonding.

F Fournel, H Moriceau, F Leroy, J Eymery… - … Wafer Bonding VII …, 2003 - books.google.com
An original direct wafer bonding process has been developed to accurately control the
bonding interface twist and tilt angles between a mono-crystalline layer and a bare mono …

Mechanical breakdown of bent silicon nanowires imaged by coherent x-ray diffraction

X Shi, JN Clark, G Xiong, X Huang… - New Journal of …, 2013 - iopscience.iop.org
We have developed a method of coherent x-ray diffractive imaging to surmount its inability to
image the structure of strongly strained crystals. We used calculated models from finite …