The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for …
Current and future mobile communications systems are aimed to increase the achieved efficiency at the backoff and to reduce the required size for the amplifier. A load modulation …
An efficient three-way Doherty amplifier is designed and simulated using Microwave Office software, where the amplifier is targeting 3.4-3.8 GHz for 5G applications using three GaN …
A three-way Doherty power amplifier targeting sub 6-GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power with an 8.5 dB back …
S Santhanam, PT Selvan - … Society Journal (ACES), 2021 - journals.riverpublishers.com
In this research article, the design procedure and comparative analysis of the 10 dB Doherty power amplifier (DPA) with single and double auxiliary amplifier for maximum efficiency has …
High efficiency is an essential requirement for any system, where the energy can be saved with full retention of system performance. The power amplifier in modern mobile …
The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for …