Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide
range of InP-based materials has been developed. The effect of plasma chemistry (the N 2 …

Photonics is an exciting area of study that is situated at the cross-section of physics, material
science, and electrical engineering. The integration of photonic devices serves to reduce the …

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs pin waveguide
photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is …

This letter demonstrates a 2times2 low optical crosstalk and low power consumption
switching matrix device based on carrier-induced effects on an InP substrate. The matrix …

We report on the small-signal high-frequency response of a GaNAsSb/GaAs pin waveguide
photodetector at 1.55-μm wavelength. The GaNAsSb absorbing layer with 3.5% N and 18 …

The authors report the demonstration of high-speed GaNAsSb/GaAs pi-n waveguide
photodetector grown by molecular beam epitaxy technique. A 0.4-m-thick GaNAsSb core …

This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS)
designed to achieve a low optical crosstalk for 1.55-mum wavelength applications. It is …

We theoretically propose and investigate the resonant wavelength-selective optical filters
based on the subwavelength metallo-dielectric nanopatch cavities and the metal slot …

Dilute nitride materials grown on GaAs substrate have shown the potential to act as new
material candidates for the optical-fiber communication system. In particular, GaNAsSb has …

Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP^ sub
1.15^/InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length …