New thin‐film dielectrics and nanolaminates have been synthesized via aqueous‐solution
deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor …

Thin films were fabricated via metalorganic decomposition methods with three compositions:
Bi 1.5 Zn 1.0 Nb 1.5 O 7, Bi 1.5 Zn 0.5 Nb 1.5 O 6.5, and Bi 2 Zn 2/3 Nb 4/3 O 7. The Bi 1.5 …

Various strategies to improve the dielectric properties of ACu3Ti4O12 (A= Sr, Ca, Ba, Cd,
and Na1/2Bi1/2) ceramics have widely been investigated. However, the reduction in the loss …

The effects of sintering conditions on the microstructure, giant dielectric response, and
electrical properties of Na 1/2 Y 1/2 Cu 3 Ti 3.975 Ta 0.025 O 12 (NYCTTaO) were studied. A …

Developing a convenient and efficient way of tantalum (Ta) electrolytic capacitor
manufacture process is of great importance in many fields, in which a time-saving and …

In this review, an introduction to nanostructured films focusing on cerium oxide (CeO2) as
high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices …

Defect state D (0.8 eV) was experimentally detected in Ta 2 O 5 capacitors with ultrathin
(physical thickness< 10 nm) Ta 2 O 5 films using zero-bias thermally stimulated current …

The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric
as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future …

We compared the suitability of tantalum pentoxide (Ta 2 O 5) films produced via thermal and
ozone based atomic layer deposition (Th-ALD and O 3-ALD, respectively) using …

Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different
composition. Photocurrent spectra revealed a band gap, E g, slightly independent on Ta …