Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges
The increased demand of high‐performance computing systems has exposed the inherent
limitations of the current state‐of‐the‐art von Neumann architecture. Therefore, developing …
limitations of the current state‐of‐the‐art von Neumann architecture. Therefore, developing …
Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2)
are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from …
are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from …
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2
Electrical and thermal properties of atomically thin two-dimensional (2D) materials are
affected by their environment, eg through remote phonon scattering or dielectric screening …
affected by their environment, eg through remote phonon scattering or dielectric screening …
Integrated Low‐Dimensional Semiconductors for Scalable Low‐power CMOS Logic
MH Chuang, KC Chiu, YT Lin… - Advanced Functional …, 2023 - Wiley Online Library
Scalable nanoelectronics with energy‐efficient logic technology is crucial for next‐
generation edge devices. Low‐dimensional semiconductors, such as transition metal …
generation edge devices. Low‐dimensional semiconductors, such as transition metal …
A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography
MoS2 is considered a promising candidate as a channel material for the next generation
semiconductor devices owing to its atomic thickness and electrical properties. However, due …
semiconductor devices owing to its atomic thickness and electrical properties. However, due …
Charge Carrier Mobility and Series Resistance Extraction in 2D Field‐Effect Transistors: Toward the Universal Technique
Abstract 2D semiconductor field‐effect transistors (2D FETs) have emerged as a promising
candidate for beyond‐silicon electronics applications. However, its device performance has …
candidate for beyond‐silicon electronics applications. However, its device performance has …
Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs
Abstract 2D layered semiconductors have attracted considerable attention for beyond‐Si
complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared …
complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared …