Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Many routes to ferroelectric HfO2: A review of current deposition methods
Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …
researchers are still intensely fascinated by this material system and the promise it holds for …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …
solution, nanolaminates, and superlattices has attracted increasing interest for future …
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …
there is tremendous interest in this material and ferroelectric oxides are once again in the …
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …
compatibility with complementary metal-oxide-semiconductor technology. However, the …
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films
Ferroelectric HfO2 is a promising material for new memory devices, but significant
improvement of its important properties is necessary for practical application. However …
improvement of its important properties is necessary for practical application. However …
Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
S Estandía, N Dix, MF Chisholm, I Fina… - Crystal Growth & …, 2020 - ACS Publications
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the
material and for prototyping emerging devices. Ferroelectric Hf0. 5Zr0. 5O2 (111) films were …
material and for prototyping emerging devices. Ferroelectric Hf0. 5Zr0. 5O2 (111) films were …
A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0. 5Zr0. 5O2 films with uniform polarization and high Curie temperature
Ferroelectric tunnel junction (FTJ) is a promising emerging memristor for the artificial
synapse in neuro-inspired computing, which has parallel data processing and low power …
synapse in neuro-inspired computing, which has parallel data processing and low power …