In some aspects, methods of forming a metal chalcogenide thin film are provided. According
to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction …

In some embodiments, a semiconductor surface having a high mobility semiconductor may
be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or …

In some aspects, methods of forming a metal Sulfide thin film are provided. According to
some methods, a metal Sulfide thin film is deposited on a Substrate in a reaction space in a …

In some aspects, methods of forming a metal sulfide thin film are provided. According to
some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a …

By introducing new concepts into a structure of a conven tional organic semiconductor
element and without using a conventional ultra thin film, an organic semiconductor ele ment …

6.255, 774 B1 7/2001 Pichler JP 06-260286 9, 1994 6,340,789 B1 1/2002 Petritsch et al. JP
11-329749 11, 1999 6,414,432 B1 7/2002 Hieda et al. JP 2001-31318O 11 2001 6,559,375 …

By introducing new concepts into a structure of a conventional organic semiconductor
element and without using a conventional ultra thin film, an organic semiconductor element …

5,821,690 A* 10/1998 Martens et al................ 313/506 EP 0 855 848 7/1998 5,837,391 A
11/1998 Utsugi EP 0 948 063 10/1999 5,858,561 A 1/1999 Epstein et al. EP 1017118 A …

By introducing new concepts into a structure of a conven tional organic semiconductor
element and without using a conventional ultra thin film, an organic semiconductor ele ment …

According to example embodiments, a two-dimensional (2D) material element may include
a first 2D material and a second 2D material chemically bonded to each other. The first 2D …