L Hu, L Wu, M Liao, X Hu, X Fang - Advanced Functional …, 2012 - Wiley Online Library
Understanding the electrical transport properties of individual semiconductor nanostructures is crucial to advancing their practical applications in high‐performance nanodevices. Large …
B Hu, L Mai, W Chen, F Yang - Acs Nano, 2009 - ACS Publications
The MoO2 nanorods (NRs) were synthesized by simple hydrogen reduction using the MoO3 nanobelts (NBs) as the templates. The growth mechanism of one-dimensional (1D) MoO2 …
Rhombohedral phase Hf x Zr1‐x O2 (HZO, x from 0 to 1) films are promising for achieving robust ferroelectric polarization without the need for an initial wake‐up pre‐cycling, as is …
M Feng, M Zhang, JM Song, XG Li, SH Yu - ACS nano, 2011 - ACS Publications
Ultralong orthorhombic silver trimolybdate nanowires (NWs) can be synthesized by a simple hydrothermal process without using any structure directing agent. Their phase …
Q Xie, X Zheng, D Wu, X Chen, J Shi, X Han… - Applied Physics …, 2017 - pubs.aip.org
Molybdenum dioxides (MoO 2) have potential applications in batteries owing to their good electrical conductivity. Here, we report the electrical properties of high-quality MoO 2 …
Novel microelectrodes or microsensors may be based in future on the extraordinary single- crystalline, channel-structured β-AgVO3 compound (see image) created by a simple …
LQ Mai, CS Lao, B Hu, J Zhou, YY Qi… - The Journal of …, 2006 - ACS Publications
Monoclinic NH4V3O8 single-crystalline nanobelts with widths of 80− 180 nm, thicknesses of 50− 100 nm, and lengths up to tens of micrometers have been synthesized at large scale in …
G Jegert, A Kersch, W Weinreich, U Schröder… - Applied Physics …, 2010 - pubs.aip.org
We report on a simulation algorithm, based on kinetic Monte Carlo techniques, that allows us to investigate transport through high-permittivity dielectrics. In the example of TiN/ZrO …
The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO 2-based electrochemical metallization memory (ECM) device were investigated. The …