Metal-insulator transitions

M Imada, A Fujimori, Y Tokura - Reviews of modern physics, 1998 - APS
Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of
orders of magnitude, and are widely observed in condensed-matter systems. This article …

Orbital physics in the perovskite Ti oxides

M Mochizuki, M Imada - New Journal of Physics, 2004 - iopscience.iop.org
Titanate compounds have been recognized as key materials for understanding the coupling
of magnetism and orbitals in strongly correlated electron systems. In the perovskite Ti oxide …

High‐permittivity double rare‐earth‐doped barium titanate ceramics with diffuse phase transition

DY Lu, M Toda, M Sugano - Journal of the American Ceramic …, 2006 - Wiley Online Library
On the basis of Ti‐vacancy defect compensation mode, high‐permittivity La‐and Ce‐doped
barium titanate ceramics (BLTC) with perovskite structure, ie,(Ba1− xLax)(Ti1− x/4− yCey) …

Photoemission study of the metallic state of lightly electron-doped SrTiO3

Y Aiura, I Hase, H Bando, T Yasue, T Saitoh… - Surface Science, 2002 - Elsevier
The behavior of the metallic state of lightly electron-doped SrTiO3 has been studied using
angle-integrated ultraviolet photoemission spectroscopy (UPS) and angle-resolved …

Photoemission spectral weight distribution in

K Morikawa, T Mizokawa, A Fujimori, Y Taguchi… - Physical Review B, 1996 - APS
We have studied Y 1− x Ca x TiO 3 by photoemission and inverse-photoemission
spectroscopy. Valence-band photoemission spectra show a d-band peak∼ 1.4 eV below …

Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate

M Dawber, JF Scott, AJ Hartmann - Journal of the European Ceramic …, 2001 - Elsevier
This paper discusses the effect of donors and acceptors on the electronic band structure and
defect properties of Ba0. 7Sr0. 3TiO3 film (BST). Based on X-Ray Photoelectron …

Spectroscopic investigations of the electronic structure and metal-insulator transitions in a Mott-Hubbard system

K Maiti, DD Sarma - Physical Review B, 2000 - APS
We investigate the electronic structure of La 1− x Ca x VO 3 for various values of x. LaVO 3 is
a Mott-Hubbard insulator with band gap of about 1.0±0.2 eV. Hole doping in this system …

Electrical transport properties of epitaxial BaTiO3 thin films

SR Gilbert, LA Wills, BW Wessels… - Journal of applied …, 1996 - pubs.aip.org
Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are
reported. Electrical resistivity and thermoelectric power were measured over the temperature …

X-ray photoelectron spectroscopy study on Ba1− xEuxTiO3

DY Lu, M Sugano, XY Sun, WH Su - Applied surface science, 2005 - Elsevier
X-ray photoelectron spectroscopy is employed to study inner-shell core-level binding
energies Eu 4d, Ti 2p and O 1s, Ba 3d for new single-phase Ba1− xEuxTiO3 (0.1≤ x≤ 0.4) …

Characterization of oxygen vacancy defects in Ba1− xCaxTiO3 insulating ceramics using electron paramagnetic resonance technique

DY Lu, LF Yuan, WN Liang, ZB Zhu - Japanese Journal of …, 2015 - iopscience.iop.org
The electron paramagnetic resonance (EPR) technique was employed to detect oxygen
vacancy defects in the tetragonal Ba 1− x Ca x TiO 3 (x= 0.03) ceramics (BCa3T) prepared …