Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
High transconductance organic electrochemical transistors
The development of transistors with high gain is essential for applications ranging from
switching elements and drivers to transducers for chemical and biological sensing. Organic …
switching elements and drivers to transducers for chemical and biological sensing. Organic …
GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz
This work demonstrates the high-frequency and high-power performance capacity of GaN
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …
W-band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology
W Shaobing, G Jianfeng, W Weibo… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC
PA) is reported. Electron-beam lithography has been employed to define a 100-nm T …
PA) is reported. Electron-beam lithography has been employed to define a 100-nm T …
Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
P Cui, Y Zeng - Scientific Reports, 2022 - nature.com
Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-
mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In …
mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In …
High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg
We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …
InAlN/GaN HEMT on Si with fmax= 270 GHz
Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs
In this Letter, we report on the enhanced radio frequency (RF) performance in sub-
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …
micrometer scaled β-Ga 2 O 3 tri-gate FinFETs. With a 200-nm-thick β-Ga 2 O 3 bulk channel …
Origin (s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon
The performance of transistors designed specifically for high-frequency applications is
critically reliant upon the semi-insulating electrical properties of the substrate. The suspected …
critically reliant upon the semi-insulating electrical properties of the substrate. The suspected …
Effects of gate length on GaN HEMT performance at room temperature
We report the electrical characteristics at room temperature of (Al, Ga) N/GaN high-electron-
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …