Silicon carbide (SiC) nanomaterials have emerged as promising candidates for
supercapacitor electrodes due to their unique properties, which encompass a broad …

Degradation of SiC power mosfet s under repetitive short-circuit (SC) stress is significant to
the reliability of the power systems. A deep level transient spectrum method together with …

Driven by the global effort towards reduction of carbon dioxide emissions from cars, the
gradual phase out of fuel cars accompanied by the rise of electric vehicles (EVs) has …

The evaluation of the operational lifespan of solder joints in electronic devices, especially
when subjected to intricate mission profiles, stands as a pivotal imperative in the domain of …

With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (mosfet s) are increasingly finding applications in …

To explain the frequent thermal failure of avalanche transistors (ATs) in Marx-bank circuits
(MBCs), the process of current channel formation under voltage ramp triggering conditions is …

A novel 4H-SiC trench MOSFET with self-clamped P-region (SCP-MOS) is proposed. The
breakdown voltage is boosted and switching oscillation is suppressed by introducing a …

The chip temperature stands as a pivotal factor in assessing the surge reliability of silicon
carbide metal-oxide-semiconductor-field-effect transistors (SiC MOSFETs). Under surge …

In this article, the short-circuit capability of 1200 V state-of-the-art silicon carbide (SiC) metal–
oxide–semiconductor field-effect transistor (mosfet) featuring reinforced double t rench …

Various methods have been discussed in the literature regarding enabling the over-current
(OC) capability of silicon carbide (SiC) MOSFETs. SiC MOSFETs can operate at up to 250° …