Two-dimensional non-layered materials
Owing to atomically thin structure and high-activity surface, two-dimensional (2D) non-
layered materials exhibit many intriguing properties, rendering them a bright application …
layered materials exhibit many intriguing properties, rendering them a bright application …
Structuring of Si into multiple scales by metal‐assisted chemical etching
RP Srivastava, DY Khang - Advanced Materials, 2021 - Wiley Online Library
Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
Halide-induced self-limited growth of ultrathin nonlayered Ge flakes for high-performance phototransistors
2D nonlayered materials have attracted intensive attention due to their unique surface
structure and novel physical properties. However, it is still a great challenge to realize the 2D …
structure and novel physical properties. However, it is still a great challenge to realize the 2D …
Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
The performance of a graphene/Ge Schottky junction near-infrared photodetector is
significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge …
significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge …
Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism
Abstract β-Ga 2 O 3, a promising ultra-wide bandgap material for future high-power
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
β-Ga2O3, with a bandgap of∼ 4.6–4.9 eV and readily available bulk substrates, has
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
[HTML][HTML] Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing
Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
Producing silicon carbide micro and nanostructures by plasma‐free metal‐assisted chemical etching
JA Michaels, L Janavicius, X Wu… - Advanced Functional …, 2021 - Wiley Online Library
Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …
harsh environment power electronics, micro and nano electromechanical systems, and …
Flexible titanium nitride/germanium-tin photodetectors based on sub-bandgap absorption
S An, Y Liao, M Kim - ACS Applied Materials & Interfaces, 2021 - ACS Publications
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …
Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer
Broadband ultraviolet–visible photodetection has been attracting growing research interests
in fields of environment, energy, and imaging. Considering the suitable bandgap and high …
in fields of environment, energy, and imaging. Considering the suitable bandgap and high …