Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Abstract A 100‐V Taper‐Shielded trench Gate (TSG) power metal‐oxide‐semiconductor
field‐effect transistor (MOSFET) with superior figure‐of‐merit (FOM) is proposed and …

This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-
effect transistor (MOSFET)(UMOSFET) fitted with a super-junction (SJ) shielded region. The …

This paper develops a physics-based compact model of shield gate trench (SGT) MOSFET,
including a drift region current, an analytical intrinsic drain potential and a charge on the …

A small-size vertical device with field plate is designed and experimentally realized in this
paper. The modulation effect of the field plate causes an enhanced bulk electric field …

In this work, an inverted L-shaped source region (ILS) structure is proposed and studied to
improve switching performance of split-gate trench metal-oxide-semiconductor field effect …

An optimized silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor
(MOSFET) structure with side-wall p-type pillar (p-pillar) and wrap n-type pillar (n-pillar) in …

In this article, we have comprehensively investigated the electrical properties of split-gate
trench (SGT) power MOSFETs under mechanical strains. The static and dynamic electrical …

Abstract A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and
investigated utilizing TCAD simulations in this paper. We have quantitatively studied the …

The state-of-the-art field-plate (FP) power MOSFETs are mostly based on a stripe cell
pattern. Few attentions were paid to their circular/hexagonal cell patterns. In this article …