Recent developments in p‐Type oxide semiconductor materials and devices
Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …
be a true enabler for a variety of applications where transparency, power efficiency, and …
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …
Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy
J Yao, N Xu, S Deng, J Chen, J She… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The electrical and photosensitive characteristics of amorphous indium-gallium-zinc-oxide (a-
IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈ O are discussed. With …
IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈ O are discussed. With …
Skin‐like oxide thin‐film transistors for transparent displays
Flexible transparent display is a promising candidate to visually communicate with each
other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have …
other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have …
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
TC Chen, TC Chang, TY Hsieh, WS Lu, FY Jian… - Applied Physics …, 2011 - pubs.aip.org
This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide
thin-film transistors under gate-bias stress. The larger V t shift under positive AC gate-bias …
thin-film transistors under gate-bias stress. The larger V t shift under positive AC gate-bias …
Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
We have analyzed the time-temperature dependence of positive bias stress (PBS) and
recovery in amorphous indium-gallium-zinc-oxide (a-IGZO) Thin-film-transistors (TFTs) …
recovery in amorphous indium-gallium-zinc-oxide (a-IGZO) Thin-film-transistors (TFTs) …
Total subgap range density of states-based analysis of the effect of oxygen flow rate on the bias stress instabilities in a-IGZO TFTs
GW Yang, J Park, S Choi, C Kim… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress
(NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin …
(NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin …
Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
X Huang, C Wu, H Lu, F Ren, Q Xu, H Ou… - Applied Physics …, 2012 - pubs.aip.org
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-
gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light …
gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light …
[PDF][PDF] Flexible a-IGZO phototransistor for instantaneous and cumulative UV-exposure monitoring for skin health
Flexible thin-film phototransistors based on amorphous indium-gallium-zinc-oxide
semiconductor and a novel read-out scheme allow for both real time and cumulative …
semiconductor and a novel read-out scheme allow for both real time and cumulative …
Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain …
SH Choi, MK Han - Applied Physics Letters, 2012 - pubs.aip.org
We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors
(TFTs) for various channel widths under high-gate and drain bias stress. The threshold …
(TFTs) for various channel widths under high-gate and drain bias stress. The threshold …