S Roy, X Zhang, AB Puthirath… - Advanced …, 2021 - Wiley Online Library
Hexagonal boron nitride (h‐BN) has emerged as a strong candidate for two‐dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical …
Moving from two-dimensional hexagonal boron nitride (2D h-BN) flatlands towards their quantum sized zero-dimensional (0D) islands, as the newest member of the h-BN family …
Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional …
B Sun, J Pang, Q Cheng, S Zhang, Y Li… - Advanced Materials …, 2021 - Wiley Online Library
The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches …
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they …
Abstract Two-dimensional (2D) hexagonal boron nitride (hBN), due to its extraordinary thermal, chemical, and optical properties, has arisen as an enticing material for the research …
Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN …
Y Yang, Y Peng, MF Saleem, Z Chen, W Sun - Materials, 2022 - mdpi.com
Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The …
We successfully demonstrated the improvement and stabilization of the electrical properties of a graphene field effect transistor by fabricating a sandwiched amorphous boron nitride (a …