Ge is considered to be one of the most promising materials for realizing full monolithic
integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to …

Various excitation-induced loss mechanisms have been identified during the development
of direct-gap semiconductor lasers. Recently, indirect-gap laser sources, particularly …

Germanium (Ge) is capturing researchers' interest as a possible optical gain medium
implementable on complementary metal-oxide-semiconductor (CMOS) chips. Band-gap …

Tensile strain is required to enhance light-emitting direct-gap recombinations in germanium
(Ge), which is a promising group IV material for realizing a monolithic light source on Si. Ge …

Single-photon avalanche diode (SPAD) detectors are of significant interest for numerous
applications, including light detection and ranging (LIDAR), and quantum technologies such …

Although the development of a monolithically-integrated, silicon-compatible light source has
been traditionally limited by the indirect band gaps of Group IV materials, germanium-tin (Ge …

Realizing a germanium (Ge)-based monolithic light source requires high n-type doping,
tensile strain, and an optical cavity. Here, we demonstrate the application of spin-on doping …

High tensile strain transfer into germanium microdisks using all-around strained SiN Page 1
High tensile strain transfer into germanium microdisks using all-around strained SiN Abdelhamid …

Band-gap engineering of bulk germanium (Ge) holds the potential for realizing a laser
source, permitting full integration of monolithic circuitry on CMOS platforms. Techniques rely …