Basic studies of the surface science aspects of plasma-assisted etching were initiated over
10 years ago in laboratories throughout the world. Several approaches to this …

This work reviews the literature for halogen adsorption on metals, semiconductors and
insulators for the period 1979 to 1987. The surface structures formed by adsorbed halogens …

Oxides are etched with a halide-containing species and a low molecular weight organic
molecule having a high vapor pressure at standard conditions, where etching is performed …

Optimal adsorption geometries and respective surface band structures for monolayers of
group-IV to group-VII adatoms on semi-infinite Si (001) substrates have been calculated …

The interaction of atomic hydrogen with halogen-terminated Si (100) surfaces was studied
by Auger electron spectroscopy (AES) and temperature-programmed desorption (TPD) …

Chlorine atoms strongly chemisorbed at dangling bond sites on the Si (100)-(2× 1) surface
are observed by scanning tunneling microscopy (STM) to hop between adjacent sites. The …

The authors report a new, important phenomenon: photo-assisted etching of p-type Si in
chlorine-containing plasmas. This mechanism was discovered in mostly Ar plasmas with a …

A combination of experimental methods has been employed for the study of Cl2 adsorption
and reaction on Si (100)–(2× 1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of∼ …

Scanning tunneling microscopy (STM) studies of spontaneous halogen etching of Si (100)-
2× 1 and Si (111) in the range 700–1100 K are reviewed. Although the morphology depends …

Photo-assisted etching of p-type Si was previously found to occur in a chlorine-containing,
Faraday-shielded, inductively coupled plasma (ICP), and this was attributed to the vacuum …