We investigated the effect of deposition temperature on the properties of the silicon oxide
films produced by alternating exposures to bis (diethylamino) silane (BDEAS) and ozone (O …

We studied the atomic layer deposition (ALD) of titanium oxide (TiO2) thin films using a
newly developed heteroleptic titanium precursor with a linked ligand. The titanium …

Pt thin films, using the Pt precursor, dimethyl (N, N-dimethyl-3-butene-1-amine-N) platinum
(DDAP, C8H19NPt), were deposited by atomic layer deposition (ALD). The growth …

The authors report the reaction mechanism of the initial fluorination process on the H-
terminated Si and the OH-terminated SiO 2 surfaces with HF, CF 4, CHF 3, NF 3, and ClF 3 …

Pyridine-catalyzed atomic layer deposition (ALD) of SiO2 from hexachlorodisilane and water
was studied by in situ analyses using Fourier-transform infrared spectrometry and a quartz …

We studied heteroleptic Hf precursors with a linked amido-cyclopentadienyl ligand by
density functional theory (DFT) calculation to enable high-temperature atomic layer …

We report the atomic layer deposition (ALD) of silicon oxide films using a chlorine-free
silylamine precursor and ozone (O3). Bis (dimethylaminomethylsilyl) trimethylsilylamine …

The adsorption of organic molecules on surfaces has played an important role in the
development of key technologies available today. These molecules provide unique …

Combining experimental and ab initio core-level photoelectron spectroscopy (periodic DFT
and quantum chemistry calculations), we elucidated how ammonia molecules bond to the …

To better understand why amines catalyze the reactivity of SiOH with silanes, we examined
the adsorption of trimethylamine under a low pressure (10–9–10–8 mbar) and a low …