Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Single vertical InP nanowire diodes with low ideality factors contacted in-array for high-resolution optoelectronics
N Lamers, K Adham, L Hrachowina… - …, 2024 - iopscience.iop.org
Nanowire (NW) optoelectronic and electrical devices offer unique advantages over bulk
materials but are generally made by contacting entire NW arrays in parallel. In contrast, ultra …
materials but are generally made by contacting entire NW arrays in parallel. In contrast, ultra …
High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications
An inversion-mode In 0.53 Ga 0.47 As FinFET exhibiting a transition frequency (f T) of 271
GHz and a maximum oscillation frequency (f max) of 78 GHz at V ds= 0.5 V is reported in this …
GHz and a maximum oscillation frequency (f max) of 78 GHz at V ds= 0.5 V is reported in this …
InxGa1-xAs Stacked Multichannel MOSFET design to improve the electrostatic Performance by Self-Heating effect reduction
In this article, we propose In x Ga 1-x As gate-all-around (GAA) MOSFET where In 0.53 Ga
0.47 As is used as channel. These devices excel in their ability to precisely modulate the …
0.47 As is used as channel. These devices excel in their ability to precisely modulate the …
Inversion-mode InGaAs FinFETs for RF applications
In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T)=
263 GHz and maximum oscillation frequency (f max)= 70 GHz. In addition, peak …
263 GHz and maximum oscillation frequency (f max)= 70 GHz. In addition, peak …
[PDF][PDF] InP/InAsP Quantum Discs-in-Nanowire Array Photodetectors: Design, Fabrication and Optical Performance
H Jeddi - 2024 - portal.research.lu.se
365523_1_OMSL_Hossein J.indd Page 1 InP/InAsP Quantum Discs-in-Nanowire Array
Photodetectors: Design, Fabrication and Optical Performance Jeddi, Hossein 2024 Document …
Photodetectors: Design, Fabrication and Optical Performance Jeddi, Hossein 2024 Document …
RF MOSFETs
In this article, the RF performance of different MOSFET architectures such as Silicon‐On‐
Insulator (SOI), Lightly Doped Drain (LDD) MOSFET, Graphene FET, and Negative …
Insulator (SOI), Lightly Doped Drain (LDD) MOSFET, Graphene FET, and Negative …