Superluminescent diodes represent a device type which can fill the gap between light
emitting diodes (LEDs) and laser diodes. The light generation based on Amplified …

High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …

2 µm photonics and optoelectronics is promising for potential applications such as optical
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …

Deep-ultraviolet emitting structures based on Al 0.65 Ga 0.35 N/Al 0.8 Ga 0.2 N multiple
quantum wells (MQWs), embedded in compositionally graded Al x Ga 1-x N films in the form …

The main objective of this work is to demonstrate and validate the feasibility of fabricating
(Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry …

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra
fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local …

In this work we investigate the role of threading dislocations in nitride light emitters with
different indium composition. We compare the properties of laser diodes grown on the low …

Recent research focused on single photon emitters (SPEs) hosted by layered
semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising …

In this paper we demonstrate 450 nm (Al, In) GaN graded index separate confinement
heterostructure travelling wave optical amplifier with a double 'j-shape'waveguide. The …

Nitrogen vacancy (NV) centers in diamond have attracted considerable recent interest for
use in quantum sensing, promising increased sensitivity for applications ranging from …