The electronic properties of inversion and accumulation layers at semiconductor-insulator
interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional …

The purpose of this review is to survey the status of the theory and experiment which can
contribute to our knowledge of plasmon excitations in synthetic semiconductor …

In this paper, the current status of intersubband lasing in quantum wells is briefly reviewed,
and the physical features related to intersubband infrared lasers are discussed. New device …

We extend our previous investigations on the band structure of superlattices by applying the
envelope-function approximation to four distinct problems. We calculate the band structure …

Following the past seventeen-year developmental path in the research of semiconductor
superlattices and quantum wells, significant milestones are presented with emphasis on …

The NATO Advanced Study Institute on" Molecular Beam Epitaxy (MBE) and
Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy …

Novel device structures are proposed, incorporating quantum wells and a pn diode
structure. Such a device combines the structure and behavior of both resonant tunneling …

Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV
overlap of the InAs conduction band and the GaSb valence band. This broken‐gap …

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …

This is a comprehensive theoretical survey of acoustic wave propagation in layered
materials including elastic, viscoelastic and piezoelectric layers. The phonon modes are …