A review of switching oscillations of wide bandgap semiconductor devices

J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

A survey on switching oscillations in power converters

T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

Silicon carbide power transistors: A new era in power electronics is initiated

J Rabkowski, D Peftitsis, HP Nee - IEEE Industrial Electronics …, 2012 - ieeexplore.ieee.org
During recent years, silicon carbide (SiC) power electronics has gone from being a
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …

A novel active gate driver for improving SiC MOSFET switching trajectory

AP Camacho, V Sala, H Ghorbani… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …

Short-circuit protection circuits for silicon-carbide power transistors

DP Sadik, J Colmenares, G Tolstoy… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …

宽禁带碳化硅功率器件在电动汽车中的研究与应用

王学梅 - 中国电机工程学报, 2014 - epjournal.csee.org.cn
以碳化硅(silicon carbide, SiC) 为主的第3 代半导体技术突破了硅材料半导体器件在耐压等级,
工作温度, 开关损耗和开关速度上的极限, 能够显著减少电力电子变换器的重量, 体积, 成本 …

Gate and base drivers for silicon carbide power transistors: An overview

D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …

Experimental and analytical performance evaluation of SiC power devices in the matrix converter

S Safari, A Castellazzi… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
With the commercial availability of SiC power devices, their acceptance is expected to grow
in consideration of the excellent low switching loss, high-temperature operation, and high …

High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors

CM DiMarino, R Burgos… - IEEE Industrial Electronics …, 2015 - ieeexplore.ieee.org
For several decades, silicon (Si) has been the primary semiconductor choice for power
electronic devices. During this time, the development and fabrication of Si devices has been …

A class-E direct AC–AC converter with multicycle modulation for induction heating systems

H Sarnago, O Lucia, A Mediano… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Induction heating systems are the technology of choice in many industrial, domestic, and
medical applications due to its high performance. The core component of such systems is …