Baddeleyite niobium oxynitride (NbON) is a possible low-cost alternative to baddeleyite
TaON, which is a well-known oxynitride semiconductor with high photocatalytic activity for …

Low surface resistance is achieved by introducing BaZrO 3 nano-particles in high crystalline
quality ErBa 2 Cu 3 O 7-δ films. The surface resistance of a ErBa 2 Cu 3 O 7-δ film with …

The effect of lattice matching between YBa/sub 2/Cu/sub 3/O/sub 7/,(YBCO) films and buffer
layers as well as between buffer layers and MgO substrates have been discussed from …

The growth and characterization of a BaZrO 3 buffer layer for controlling the in-plane
orientation of YBa 2 Cu 3 O 7− δ films grown on MgO substrates is described. BaZrO 3 buffer …

We have observed the reduction of the microwave surface resistance R s of YBa 2 Cu 3 O y
films deposited on MgO substrates by covering the films with an overdoped Y 1− x Ca x Ba 2 …

The surface quality of NiO buffer produced by surface-oxidation epitaxy (SOE) was improved
by a polishing technique. Critical current density, Jc, of the YBa2Cu3O7− δ (YBCO) film …

High quality hetero-epitaxial CeO 2 films are grown on MgO substrates using BaSnO 3
buffer layers. CeO 2 films and BaSnO 3 buffer layers are grown by a pulsed laser deposition …

The effect of a flow guide in a vertical MOCVD reactor on the deposition uniformity and
growth rate of thin YBCO films has been studied. Without the flow guide the growth rates are …

The critical thickness of BaSnO3 (BSO) buffer layer for YBa2Cu3O7− δ (YBCO) thin films on
MgO substrate is discussed from viewpoints of the in-plane orientation and critical …

Anatase TaON is a promising semiconducting oxynitride with high Hall mobility. However,
the high temperature (≥ 750 C) required for its epitaxial growth on (LaAlO 3) 0.3–(SrAl 0.5 …