Zn-IV-nitrides have a range of potential applications in electronic and optoelectronic devices
and can be integrated with currently used III-nitride semiconductors and their alloys. Using …

Band structure engineering based on InGaN/ZnGeN2 heterostructure quantum wells (QWs)
is proposed to address the long-standing charge separation challenge in visible light …

ZnGeN 2 films were grown on GaN-on-sapphire templates via metalorganic chemical vapor
deposition. Energy dispersive x-ray spectroscopy was used to estimate the Zn/(Zn+ Ge) …

Abstract Zinc Tin Germanium Nitride (ZnSn x Ge 1-x N 2) alloys, which consist of the ternary
nitrides ZnSnN 2 and ZnGeN 2, are notable for being earth-abundant materials that offer …

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band
offset at the ZnGeN 2/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN …

The effect of inserting a nm-scale layer of Zn (Si, Ge) N 2 into an AlGaN quantum well
structure designed for light emission in the wavelength range from 255 to 305 nm is …

A rapid advancement and adoption of the light emitting diodes (LEDs) based solid state
lighting (SSL) technology is projected to reduce the annual lighting energy consumption …

The wurtzite III-nitrides are an established set of wide-band-gap semiconductors with a wide
range of applications in optical and electronic devices. Recently, new types of nitride …

Ultraviolet (UV) light emitting diodes (LEDs) have been attracting research interest as an
environment-friendly, compact, spectra-tunable, controllable and energy efficient alternative …