While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

We study the stability of the rare-earth dopant, Eu, in metal-halide perovskite CsPbBr3 with
cubic and orthorhombic structures from first-principles calculations. In these perovskites, Eu …

In this work, luminescence properties of Europium doped ZnO and ZnMgO thin films grown
on a-oriented (11–20) sapphire substrates by oxygen plasma assisted Molecular Beam …

We demonstrate a GaN: Eu, O-based resonant-cavity light emitting diode (RCLED)
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …

Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …

The development of efficient electrically driven color-tunable solid-state light sources will
enable new capabilities in lighting and display technologies. Although alternative light …

A physically intuitive current injection efficiency model for a GaN: Eu quantum well (QW) has
been developed to clarify the necessary means to achieve device quantum efficiency higher …

Photoluminescence (PL) of Eu 3+ ions in single layers of ZnO and ZnMgO and in short-
period ZnO/ZnMgO and ZnO/MgO superlattices (SLs) grown by molecular beam epitaxy was …

Conductive thin films are industrially applied from display units to sensors. For many
applications, current thin films struggle with a lack of transparency to light and of mechanical …

GaN: Eu-based red light-emitting diodes (LEDs), characterized by spectrally stable and
narrow-wavelength operation, have recently reached output-powers respectable for …