In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

We have carried out first-principles total energy calculations to investigate electronic and
elastic properties of both zinc-blende and wurtzite BN, AlN, and GaN. We have calculated …

We report first-principles calculations of the structural, dielectric, and lattice-dynamical
properties for wurtzite and zinc-blende GaN. The structural properties are calculated using a …

Micro-Raman scattering from single crystal GaN films, both free-standing and attached to
Al2O3 substrates, was performed over the temperature range from 78 to 800 K. These …

High-quality nitride materials grown on scalable and low-cost metallic substrates are
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …

The electronic band structures of silicon and the zinc-blende-type III-N semiconductor
compounds BN, AlN, GaN, and InN are calculated by using the self-consistent full potential …

We have grown high-quality cubic GaN epilayers on GaAs and 3C-SiC substrates by
molecular beam epitaxy technique using dimethylhydrazine or ammonia/nitrogen plasma as …

We present a comprehensive picture of dynamical and electrostatic properties of boron,
aluminum, gallium, and indium nitride. Our investigations are based on first-principles …

Phase separation suppression due to external biaxial strain is observed in InxGa1xN alloy
layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers …