Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …
unraveling the different causes behind this phenomenon. Among them, oxygen related …
Neuromorphic devices based on fluorite‐structured ferroelectrics
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …
that may not curtail in the foreseeable future. The required data processing speed and …
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …
K Toprasertpong, K Tahara, Y Hikosaka… - … Applied Materials & …, 2022 - ACS Publications
The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …
ferroelectric thin films leads to two critical challenges for their application in embedded …
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
FeFET: A versatile CMOS compatible device with game-changing potential
S Beyer, S Dünkel, M Trentzsch, J Müller… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
With the discovery of ferroelectricity in HfO 2 based thin films and the co-integration of
ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS …
ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0. 5Zr0. 5O2 films with uniform polarization and high Curie temperature
Ferroelectric tunnel junction (FTJ) is a promising emerging memristor for the artificial
synapse in neuro-inspired computing, which has parallel data processing and low power …
synapse in neuro-inspired computing, which has parallel data processing and low power …
Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics
Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory (FeRAM),
but certain reliability issues must be satisfactorily resolved before they can be widely applied …
but certain reliability issues must be satisfactorily resolved before they can be widely applied …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …