Emerging halide perovskite ferroelectrics

W Zheng, X Wang, X Zhang, B Chen, H Suo… - Advanced …, 2023 - Wiley Online Library
Halide perovskites have gained tremendous attention in the past decade owing to their
excellent properties in optoelectronics. Recently, a fascinating property, ferroelectricity, has …

Epitaxial oxides on semiconductors: from fundamentals to new devices

DP Kumah, JH Ngai, L Kornblum - Advanced Functional …, 2020 - Wiley Online Library
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …

Stabilization of phase-pure rhombohedral in pulsed laser deposited thin films

L Bégon-Lours, M Mulder, P Nukala, S De Graaf… - Physical Review …, 2020 - APS
Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a
semiconducting electrode has high technological interest, as ferroelectric materials are key …

High performance LaNiO3-buffered,(001)-oriented PZT piezoelectric films integrated on (111) Si

Y Wang, J Ouyang, H Cheng, Y Shi… - Applied Physics …, 2022 - pubs.aip.org
Integration of high-performance lead zirconate titanate (PZT) piezoelectric films onto (111) Si
substrates is beneficial for the development of piezoelectric micro-electro-mechanical …

Controlling strain relaxation by interface design in highly lattice-mismatched heterostructure

Y Zhang, W Si, Y Jia, P Yu, R Yu, J Zhu - Nano Letters, 2021 - ACS Publications
Strain engineering plays an important role in tuning the microstructure and properties of
heterostructures. The key to implement the strain modulation to heterostructures is …

Excellent ferroelectric properties sensitive to external voltage in PZT/LNO/NSTO heterostructures prepared by a sol-gel method

JL Lin, YJ Wu, C Li, SM Wang - Materials Today Communications, 2022 - Elsevier
In the rapidly developing information age, various electronic devices made of ferroelectric
films have been widely used. However, the current market demand for high electrical …

[HTML][HTML] Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

EN Jin, BP Downey, VJ Gokhale, JA Roussos… - APL Materials, 2021 - pubs.aip.org
Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to
improve functionality and performance in high-power RF and power-switching applications …

Temperature-dependent optical and surface electrical properties of Pb(Zr0.3Ti0.7)O3/p-GaN film

S Lin, Z Chen, R Yao, X Lin, L Wan… - Optical Materials …, 2024 - opg.optica.org
Understanding the temperature-dependent optical and electrical properties of PZT, a
multifunctional ferroelectric thin film with temperature sensitivity, is crucial for its applications …

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

L Chen, Z Lu, C Fu, Z Bi, M Que, J Sun, Y Sun - Micromachines, 2024 - mdpi.com
In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high
electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices …

Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO 3/MgO/AlGaN/GaN/Si heterostructures

G Li, X Li, J Zhao, Q Zhu, Y Chen - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
BaTiO3 (BTO)/MgO/GaN and BTO/MgO/AlGaN/GaN ferroelectric–semiconductor
heterostructures with ultrathin MgO buffer layers were constructed by pulsed laser …