Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

There are a variety of methods for synthesizing or fabricating one‐dimensional (1D)
nanostructures containing heterojunctions between different materials. Here we review …

Helical nanomaterials represent an emerging group of nanostructures with unique spiral
geometry as well as multiple functionalities owing to their enriched physical and chemical …

Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the
synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal …

The structural and optical properties of InGaN/GaN nanowire heterostructures grown by
plasma-assisted molecular beam epitaxy have been studied using a combination of …

We have performed a detailed investigation of the molecular beam epitaxial growth and
characterization of InN nanowires spontaneously formed on Si (111) substrates under …

Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light
emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their …

We have investigated strained GaAs–GaInP core–shell nanowires using transmission
electron microscopy and nanofocused scanning X-ray diffraction. Nominally identical growth …

This review will give a brief introduction to the growth and characterization methods of both
binary and ternary compounds, in particular those exhibiting one-dimensionality, of the …

In x Ga 1-x N nanowires (NWs) have drawn great attentions as a promising photocatalyst for
H 2 generation via solar water splitting. In this article, m-axial NWs with In x Ga 1-x N/GaN …