Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
[HTML][HTML] Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
Optoelectronic properties of single and array of 1-D III-nitride nanostructures: An approach to light-driven device and energy resourcing
One dimensional (1-D) group III-nitride nanostructures are important components of
optoelectronic devices owing to its unique feature of unidirectional carrier flow, and efficient …
optoelectronic devices owing to its unique feature of unidirectional carrier flow, and efficient …
Al (Ga) N nanowire deep ultraviolet optoelectronics
In this chapter, we review the recent progress made on the growth and characterization of Al
(Ga) N nanowires and related optoelectronic devices, with a focus on Al-rich Al (Ga) N …
(Ga) N nanowires and related optoelectronic devices, with a focus on Al-rich Al (Ga) N …
Passivation of Surface States of AlGaN Nanowires Using H3PO4 Treatment To Enhance the Performance of UV-LEDs and Photoanodes
Surface states serve as additional charge-carrier-trapping centers and create an energy
barrier at the semiconductor–electrolyte interface. This in turn may severely reduce the …
barrier at the semiconductor–electrolyte interface. This in turn may severely reduce the …
Surface optical phonon modes in hexagonal shaped Al0.97Ga0.03N nanostructures
Raman modes of plasma assisted molecular beam epitaxy grown, c-plane oriented and
hexagonal shaped cylindrical Al 0.97 Ga 0.03 N nanostructures are reported. Apart from the …
hexagonal shaped cylindrical Al 0.97 Ga 0.03 N nanostructures are reported. Apart from the …
Design, synthesis and evaluation of 4H-Chromene-4-one analogues as potential Anti-bacterial and Anti-fungal agents
N Singh, S Satpute, N Polkam, R Kant… - Chemical Biology …, 2020 - pubs.iscience.in
A library of 28 newer 4H-cromen-4-one derivatives were designed, synthesized and
screened for their antibacterial and antifungal efficacy against a panel of bacterial and …
screened for their antibacterial and antifungal efficacy against a panel of bacterial and …
Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations
Presently, the piezoelectric materials are finding tremendous applications in the micro-
mechanical actuators, sensors, and self-powered devices. In this context, the studies …
mechanical actuators, sensors, and self-powered devices. In this context, the studies …
The light–matter interaction of a single semiconducting AlGaN nanowire and noble metal Au nanoparticles in the sub-diffraction limit
Near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-
diffraction limited objects but also a prominent characteristic tool for understanding the …
diffraction limited objects but also a prominent characteristic tool for understanding the …
The characterization of AlGaN nanowires prepared via chemical vapor deposition
R Jiang, X Meng - Journal of Materials Science: Materials in Electronics, 2019 - Springer
AlGaN ternary alloys exhibit some superior properties due to their tunable direct band gap
and make them widely used in the fabrication of electronic and optoelectronic devices. Here …
and make them widely used in the fabrication of electronic and optoelectronic devices. Here …