A quantum dot single-photon turnstile device

P Michler, A Kiraz, C Becher, WV Schoenfeld… - science, 2000 - science.org
Quantum communication relies on the availability of light pulses with strong quantum
correlations among photons. An example of such an optical source is a single-photon pulse …

[图书][B] Quantum dots

L Jacak, P Hawrylak, A Wojs - 2013 - books.google.com
We present an overview of the theoretical background and experimental re sults in the
rapidly developing field of semiconductor quantum dots-systems 8 6 of dimensions as small …

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

JM Garcıa, G Medeiros-Ribeiro, K Schmidt… - Applied Physics …, 1997 - pubs.aip.org
The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum
dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy …

[图书][B] Introduction to nanoscale science and technology

M Di Ventra, S Evoy, JR Heflin Jr - 2004 - Springer
Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Red-emitting semiconductor quantum dot lasers

S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey… - Science, 1996 - science.org
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been
demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown …

Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

XQ Zhang, S Ganapathy, H Kumano, K Uesugi… - Journal of applied …, 2002 - pubs.aip.org
Self-assembled InAs quantum dots (QDs) embedded in GaN 0.007 As 0.993 strain
compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs …

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

S Maimon, E Finkman, G Bahir, SE Schacham… - Applied Physics …, 1998 - pubs.aip.org
Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum
wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were …

Rapid carrier relaxation in quantum dots characterized by differential transmission spectroscopy

TS Sosnowski, TB Norris, H Jiang, J Singh, K Kamath… - Physical Review B, 1998 - APS
Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by
time-resolved differential transmission measurements. The dots have a base dimension of …

Multiexciton spectroscopy of a single self-assembled quantum dot

E Dekel, D Gershoni, E Ehrenfreund, D Spektor… - Physical review …, 1998 - APS
We apply low temperature confocal optical microscopy to spatially resolve, and
spectroscopically study, a single self-assembled quantum dot. By comparing the emission …

Chemical dopant engineering in hole transport layers for efficient perovskite solar cells: insight into the interfacial recombination

J Zhang, Q Daniel, T Zhang, X Wen, B Xu, L Sun… - ACS …, 2018 - ACS Publications
Chemical doping of organic semiconductors has been recognized as an effective way to
enhance the electrical conductivity. In perovskite solar cells (PSCs), various types of dopants …