We present an overview of the theoretical background and experimental re sults in the rapidly developing field of semiconductor quantum dots-systems 8 6 of dimensions as small …
The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy …
Nanoscale science and technology is a young and burgeoning field that encompasses nearly every discipline of science and engineering. With rapid advances in areas such as …
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown …
XQ Zhang, S Ganapathy, H Kumano, K Uesugi… - Journal of applied …, 2002 - pubs.aip.org
Self-assembled InAs quantum dots (QDs) embedded in GaN 0.007 As 0.993 strain compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs …
S Maimon, E Finkman, G Bahir, SE Schacham… - Applied Physics …, 1998 - pubs.aip.org
Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were …
TS Sosnowski, TB Norris, H Jiang, J Singh, K Kamath… - Physical Review B, 1998 - APS
Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by time-resolved differential transmission measurements. The dots have a base dimension of …
We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study, a single self-assembled quantum dot. By comparing the emission …
Chemical doping of organic semiconductors has been recognized as an effective way to enhance the electrical conductivity. In perovskite solar cells (PSCs), various types of dopants …