An all-wet process was achieved using electroless deposition of barrier and Cu seed layers
for fabrication of a high aspect ratio through-Si via (TSV). Formation of a thin barrier metal …

High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been
electrically characterized in the direct current (dc) and microwave regimes for 3D …

Through silicon via (TSV) is the key technology for 3-D integrated circuits (3-DICs) which
could vertically stack homogeneous or heterogeneous dies with the high performance and …

Measurement-based electrical characterization of through silicon via (TSV) and
redistribution layer (RDL) is of great importance for both fabrication process and system …

Three dimensional (3D) integration attempts to keep Moore's Law effectively in the years to
come. Through-silicon-vias (TSV) processes offer a step towards 3D integration. In this work …

Through-silicon vias (TSVs) present new, essential elements within 3D stacked Integrated
Circuits (IC). Since they connect different layers of 3D stacks, their proper operation is an …

This letter proposes an RF model of through-silicon via (TSV) considering both skin-depth
and lossy substrate effects up to 20 GHz. The TSV is fabricated in 0.18-μm SiGe BiCMOS …

In this paper we present the design and fabrication of air-clad planar transmission lines and
TSVs that can be used as horizontal and vertical chip-chip interconnects. Performance …

Les innovations actuelles en électronique allient à la fois des critères de coût, de
performance et de taille. Or à l'ère du tout numérique, les technologies CMOS sont …

This paper is essentially composed of two parts for future synthesis. We developed 2D and
3D simulations, starting from a 0.35 μm standard CMOS technology, focusing on through …