In this paper, we review the compact-modeling framework for undoped double-gate (DG)
silicon-on-insulator (SOI) MOSFETs. The use of multiple gates has emerged as a new …

This article presents an up-to-date review of the several extraction methods commonly used
to determine the value of the threshold voltage of MOSFETs. It includes the different methods …

This article presents an up-to-date review of several methods used for extraction of diode
and solar cell model parameters. In order to facilitate the choice of the most appropriate …

We present a new method to extract the intrinsic and extrinsic model parameters of
illuminated solar cells containing parasitic series resistance and shunt conductance. The …

This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …

We describe a new drain current model for nanoscale undoped-body symmetric dual-gate
MOSFETs based on a fully consistent physical description. The model consists on a single …

Classical analyses of various conventional solar cell models are examined. They are unified
through the separation of their linear and nonlinear components and the application of …

Power dissipation is currently one of the most important design constraints in digital systems.
In order to reduce power and energy demands in the foremost technology, namely CMOS, it …

The applicability of the Lambert-W function-based parameter extraction methodology is
demonstrated for 28 nm FDSOI MOSFETs down to deep cryogenic temperatures (4.2 K). The …

We extend our previous Lambert function-based analytic solution for the surface potential of
undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface …