A 60 GHz drain-source neutralized wideband linear power amplifier in 28 nm CMOS

SV Thyagarajan, AM Niknejad… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
CMOS technology scaling has enabled the design of high speed and efficient digital circuits.
However, the continued scaling is detrimental to the design of RF and mm-wave systems …

Design of wideband LNAs using parallel-to-series resonant matching network between common-gate and common-source stages

YT Lo, JF Kiang - IEEE transactions on microwave theory and …, 2011 - ieeexplore.ieee.org
A method is proposed to design wideband low-noise amplifiers (LNAs) made of cascaded
common-gate (CG) and common-source (CS) stages with a parallel-to-series resonant …

98 mW 10 Gbps wireless transceiver chipset with D-band CMOS circuits

M Fujishima, M Motoyoshi, K Katayama… - IEEE Journal of Solid …, 2013 - ieeexplore.ieee.org
Recently, short-distance high-speed wireless communication using a 60 GHz band has
been studied for mobile application. To realize higher-speed wireless communication while …

A low-noise quadrature VCO based on magnetically coupled resonators and a wideband frequency divider at millimeter waves

U Decanis, A Ghilioni, E Monaco… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
Wireless on-chip processing at millimeter waves still lacks key functions: quadrature
generation enabling direct conversion architectures and simplifying phased-array systems …

A wideband receiver for multi-Gbit/s communications in 65 nm CMOS

F Vecchi, S Bozzola, E Temporiti… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
High-rate communications technology leveraging the unlicensed spectrum around 60 GHz
is almost ready for deployment with several demonstrations of successful wireless links. One …

A circuit designer's guide to 5G mm-wave

AM Niknejad, S Thyagarajan, E Alon… - 2015 IEEE Custom …, 2015 - ieeexplore.ieee.org
The fourth generation mobile phone standards (4G) in widespread use include Long Term
Evolution (LTE) and LTE-A (Advanced), which support up to 44 bands internationally, or an …

Design of a very low-power, low-cost 60 GHz receiver front-end implemented in 65 nm CMOS technology

M Kraemer, D Dragomirescu, R Plana - International Journal of …, 2011 - cambridge.org
The research on the design of receiver front-ends for very high data-rate communication in
the 60 GHz band in nanoscale Complementary Metal Oxide Semiconductor (CMOS) …

A 42.5–51.0 GHz SiGe BiCMOS integrated tunable bandpass filter and attenuator

A Moradinia, CD Cheon, CT Coen… - 2022 IEEE BiCMOS …, 2022 - ieeexplore.ieee.org
This paper presents a 42.5–51.0 GHz integrated tunable bandpass filter and attenuator;
hereinafter referred to as a" filttenuator," which is implemented in a 130 nm SiGe BiCMOS …

A broadband millimeter-wave passive CMOS down-converter

A Moroni, D Manstretta - 2012 IEEE Radio Frequency …, 2012 - ieeexplore.ieee.org
A power-matched passive mixer suitable for a quadrature direct-conversion mm-wave
receiver has been integrated in a 65nm CMOS technology. The design of a simple …

A push-push VCO with 13.9-GHz wide tuning range using loop-ground transmission line for full-band 60-GHz transceiver

T Nakamura, T Masuda, K Washio… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
A 59-GHz push-push voltage-controlled oscillator (VCO)-based on 0.18 m SiGe BiCMOS
technology-for a full-band 60-GHz transceiver was developed. The VCO uses a loop-ground …