Recent advances and trends in Cu–Cu hybrid bonding
JH Lau - IEEE Transactions on Components, Packaging and …, 2023 - ieeexplore.ieee.org
In this study, the recent advances and trends in Cu–Cu hybrid bonding will be investigated.
Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges …
Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges …
Historical perspectives, state of art and research trends of SPAD arrays and their applications (Part II: SPAD arrays)
The ability to detect single photons is becoming an enabling key capability in an increasing
number of fields. Indeed, its scope is not limited to applications that specifically rely on single …
number of fields. Indeed, its scope is not limited to applications that specifically rely on single …
Overview and outlook of through‐silicon via (TSV) and 3D integrations
JH Lau - Microelectronics International, 2011 - emerald.com
Purpose–The purpose of this paper is to focus on through‐silicon via (TSV), with a new
concept that every chip or interposer could have two surfaces with circuits. Emphasis is …
concept that every chip or interposer could have two surfaces with circuits. Emphasis is …
[图书][B] Smart CMOS image sensors and applications
J Ohta - 2020 - taylorfrancis.com
Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications,
Second Edition is the only book available devoted to smart CMOS image sensors and …
Second Edition is the only book available devoted to smart CMOS image sensors and …
Progress in silicon single-photon avalanche diodes
Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to
photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single …
photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single …
A 128 128 Single-Photon Image Sensor With Column-Level 10-Bit Time-to-Digital Converter Array
An imager for time-resolved optical sensing was fabricated in CMOS technology. The sensor
comprises an array of 128times128 single-photon pixels, a bank of 32 time-to-digital …
comprises an array of 128times128 single-photon pixels, a bank of 32 time-to-digital …
Semiconductor crystal islands for three-dimensional integration
F Crnogorac, S Wong, RFW Pease - Journal of Vacuum Science & …, 2010 - pubs.aip.org
The critical operation needed to achieve monolithic three-dimensional integrated circuits is
obtaining single-crystal, device-quality semiconductor material for upper layer active circuits …
obtaining single-crystal, device-quality semiconductor material for upper layer active circuits …
Direct time-of-flight single-photon imaging
I Gyongy, NAW Dutton… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article provides a tutorial introduction to the direct Time-of-Flight (dToF) signal chain
and typical artifacts introduced due to detector and processing electronic limitations. We …
and typical artifacts introduced due to detector and processing electronic limitations. We …
[图书][B] TOF range-imaging cameras
F Remondino, D Stoppa - 2013 - Springer
TOF range-imaging cameras TOF Range-Imaging Cameras Fabio Remondino David Stoppa
Editors Page 2 TOF Range-Imaging Cameras Page 3 Fabio Remondino • David Stoppa Editors …
Editors Page 2 TOF Range-Imaging Cameras Page 3 Fabio Remondino • David Stoppa Editors …
Backside illuminated SPAD image sensor with 7.83 μm pitch in 3D-stacked CMOS technology
T Al Abbas, NAW Dutton, O Almer… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode
(SPAD) image sensor capable of both single photon counting (SPC) intensity, and time …
(SPAD) image sensor capable of both single photon counting (SPC) intensity, and time …