Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential
T Wostatek, VYMR Chirala, N Stoddard, EN Civas… - Materials, 2024 - mdpi.com
The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with
an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects …
an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects …
Tight-binding analysis of the effect of strain on the band structure of GaN
The effects of strain on the band structure of GaN are investigated by using an empirical tight-
binding method. The impacts on its bandgap, carrier effective mass, and group velocity are …
binding method. The impacts on its bandgap, carrier effective mass, and group velocity are …
Full-band Monte Carlo analysis of strain effects on carrier transport in GaN
The effects of strain on the carrier transport in gallium nitride (GaN) are investigated using a
full-band Monte Carlo method combined with an empirical tight-binding method. The …
full-band Monte Carlo method combined with an empirical tight-binding method. The …