Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
AJ Lochtefeld, MT Currie, Z Cheng, J Fiorenza… - US Patent …, 2012 - Google Patents
(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …
Faceted structure, article, sensor device, and method
S LeBoeuf, P Sandvik, R Potyrailo - US Patent App. 11/480,185, 2007 - Google Patents
(57) ABSTRACT A faceted structure is provided that includes a crystalline composition
comprising a metal nitride. The metal com prises one or more of aluminum, boron, indium, or …
comprising a metal nitride. The metal com prises one or more of aluminum, boron, indium, or …
Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
H Tanaka, Y Hosokawa, Y Shibutani - US Patent 7,683,386, 2010 - Google Patents
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efficiency and crystal growth - Google Patents US7683386B2 - Semiconductor light emitting …
efficiency and crystal growth - Google Patents US7683386B2 - Semiconductor light emitting …
Semiconductor sensor structures with reduced dislocation defect densities
Z Cheng, JG Fiorenza, C Sheen… - US Patent 8,253,211, 2012 - Google Patents
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5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …
5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
AJ Lochtefeld, MT Currie, Z Cheng, J Fiorenza… - US Patent …, 2014 - Google Patents
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited
area regions having upper por tions Substantially exhausted of threading dislocations, as …
area regions having upper por tions Substantially exhausted of threading dislocations, as …
Photovoltaics on silicon
J Li, AJ Lochtefeld, C Sheen, Z Cheng - US Patent 9,508,890, 2016 - Google Patents
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et al. 4,774,205 A 9, 1988 Choi et al. 4,789,643 A 12/1988 Kajikawa et al. 4,826,784. A …
Reduction of edge effects from aspect ratio trapping
Z Cheng - US Patent 8,274,097, 2012 - Google Patents
US8274097B2 - Reduction of edge effects from aspect ratio trapping - Google Patents
US8274097B2 - Reduction of edge effects from aspect ratio trapping - Google Patents …
US8274097B2 - Reduction of edge effects from aspect ratio trapping - Google Patents …
Light-emitter-based devices with lattice-mismatched semiconductor structures
J Li, AJ Lochtefeld - US Patent 8,502,263, 2013 - Google Patents
US8502263B2 - Light-emitter-based devices with lattice-mismatched semiconductor structures
- Google Patents US8502263B2 - Light-emitter-based devices with lattice-mismatched …
- Google Patents US8502263B2 - Light-emitter-based devices with lattice-mismatched …
Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
K Motoki, T Okahisa, N Matsumoto - US Patent 6,468,347, 2002 - Google Patents
A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a
substrate, producing a three-dimensional facet structure including facets in the GaN crystal …
substrate, producing a three-dimensional facet structure including facets in the GaN crystal …