Materials science challenges to graphene nanoribbon electronics
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor
The development of high-performance oxide-based transistors is critical to enable very large-
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
A review of phototransistors using metal oxide semiconductors: Research progress and future directions
Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …
the display industry. However, their phototransistors are still in their infancy. In particular …
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …
Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
HM Kim, DG Kim, YS Kim, M Kim… - International Journal of …, 2023 - iopscience.iop.org
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …
semiconductors has grown. They offer high mobility, low off-current, low process …
[HTML][HTML] Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
Recent progress in the development of backplane thin film transistors for information displays
This review aims to provide a technical roadmap and progress update for backplane thin film
transistors (TFTs) used in organic light emitting diodes flat panel displays and next …
transistors (TFTs) used in organic light emitting diodes flat panel displays and next …