We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear
behaviors which could be used in new polariton based devices. Operation in the strong …

The continuous wave operation of a gallium-nitride-based vertical-cavity surface-emitting
laser (GaN-based VCSEL) that uses boron ion implantation for lateral current confinement …

The authors report the observation of electroluminescence from GaAs-based semiconductor
microcavities in the strong coupling regime. At low current densities, the emission consists of …

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer
lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to …

Laser action with low threshold average pump power density (∼ 50 W· cm− 2) at room
temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) …

With edge-emitting GaN-based lasers in commercial systems, attention is shifting to more
demanding and rewarding emitters. These encompass microcavity (MC)-based vertical …

We report on the design of the geometry and chip size–controlled structures of microscale
light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture and …

In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting
lasers (VCSELs) a dielectric aperture is generally used in combination with an indium–tin …