A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs
N Choudhury, S Mahapatra - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs)
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
The Reaction Diffusion Drift (RDD) model is incorporated in the Sentaurus Technology CAD
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
A Comprehensive Framework for the Self-Heat Enhanced BTI and HCD Isolation
Contributions due to bias temperature instability (BTI) and hot carrier degradation (HCD) in
the presence of self-heating (SH) on parametric shift are analyzed in gate-all-around …
the presence of self-heating (SH) on parametric shift are analyzed in gate-all-around …