Twisted epitaxy of gold nanodisks grown between twisted substrate layers of molybdenum disulfide
We expand the concept of epitaxy to a regime of “twisted epitaxy” with the epilayer crystal
orientation between two substrates influenced by their relative orientation. We annealed …
orientation between two substrates influenced by their relative orientation. We annealed …
Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers
S Gandrothula, T Kamikawa, P Shapturenka… - Applied Physics …, 2021 - pubs.aip.org
We have fabricated μLEDs of mesa sizes 10× 10 and 15× 15 μm 2 on native (20 21)
semipolar substrates and on epitaxial lateral overgrown (ELO) wings of the (20 21) …
semipolar substrates and on epitaxial lateral overgrown (ELO) wings of the (20 21) …
Design, fabrication and characterization of nanostructured SiO2/TiO2/ITO conductive Bragg reflectors for optoelectronic applications
Abstract Conductive Bragg Reflectors SiO 2/TiO 2/ITO thin films have been grown on glass
substrate at room temperature by thermal evaporation and then were annealed in annealing …
substrate at room temperature by thermal evaporation and then were annealed in annealing …
Realization of p-type conduction in compositionally graded quaternary AlInGaN
C Zhao, G Deng, L Zhang, Y Wang, Y Niu, J Yu… - Micro and …, 2022 - Elsevier
Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the
band gap and lattice constant, and it shows the great potential in the fabrication of nitride …
band gap and lattice constant, and it shows the great potential in the fabrication of nitride …
InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …
Semipolar {20 2¯ 1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing
S Gandrothula, H Zhang, P Shapturenka, R Anderson… - Crystals, 2021 - mdpi.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing …
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing …
Development of Long-Cavity III-Nitride Vertical-Cavity Surface-Emitting Lasers
NC Palmquist - 2024 - search.proquest.com
GaN vertical-cavity surface-emitting lasers (VCSELs) show promise for numerous lighting,
display, communications, and sensor applications due to their visible wavelength emission …
display, communications, and sensor applications due to their visible wavelength emission …
[PDF][PDF] Semipolar {20𝟐̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing
S Gandrothula, H Zhang, P Shapturenka, R Anderson… - 2022 - videleaf.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing …
lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing …
Improvement of Quality Factor and Reduction of Spectral Bandwidth of Microcavity OLED by Bragg Mirrors
A green microcavity organic lightemitting diode combining an Al electrode (top mirror) with a
distributed Bragg reflector (bottom mirror) was designed and fabricated to improve the …
distributed Bragg reflector (bottom mirror) was designed and fabricated to improve the …