Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better
performance and integration than traditional oxide ferroelectrics with semiconductors such …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators.
Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct …

Ultrawide bandgap ferroelectric nitride semiconductors have shown promising applications
in electronic, micromechanical, and optical devices. Current studies, however, have largely …

Wurtzite LaN (wz-LaN) is a semiconducting nitride that has piezoelectric and ferroelectric
properties, making it promising for applications in electronics, either as a binary compound …

In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …

To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently
developed epitaxial nitride metal electrode, Nb 2 N. While a control AlN thin film exhibits …