A short-circuit safe operation area identification criterion for SiC MOSFET power modules
This paper proposes a new method for the investigation of the short-circuit safe operation
area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the …
area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the …
Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence
This article presents the impact of repetitive shortcircuit (SC) tests on the normal operation of
a commercial silicon carbide (SiC) MOSFET and the influence of different case temperatures …
a commercial silicon carbide (SiC) MOSFET and the influence of different case temperatures …
Failure estimates for SiC power MOSFETs in space electronics
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs)
are space-ready in terms of typical reliability measures. However, single event burnout …
are space-ready in terms of typical reliability measures. However, single event burnout …
Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets
In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet
modules is investigated through the combination of both accelerated power-cycling tests …
modules is investigated through the combination of both accelerated power-cycling tests …
Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation
This paper presents short-circuit (SC) performance of a commercial silicon-carbide (SiC)
MOSFET device under repetitive SC stress at high drain source voltage. Two protocols are …
MOSFET device under repetitive SC stress at high drain source voltage. Two protocols are …
Investigation on the short circuit safe operation area of SiC MOSFET power modules
This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET
power modules rated at 1.2 kV by highlighting the physical limits under different operating …
power modules rated at 1.2 kV by highlighting the physical limits under different operating …
SiC MOSFET 短路失效与退化机理研究综述及展望
康建龙， 辛振， 陈建良， 王怀， 李武华 - 中国电机工程学报, 2020 - epjournal.csee.org.cn
SiC MOSFET 可以大幅提升变流器的效率和功率密度, 在高频, 高温, 高压等领域有较好的应用
前景. 但是, 由于其短路耐受时间短, 特性退化现象严重以及失效机理模糊等因素, 致使SiC …
前景. 但是, 由于其短路耐受时间短, 特性退化现象严重以及失效机理模糊等因素, 致使SiC …
Comparison of the short circuit capability of planar and trench SiC MOSFETs
D Pappis, L de Menezes… - PCIM Europe 2017; …, 2017 - ieeexplore.ieee.org
An experimental investigation about the short circuit capability of planar and the new trench
SiC MOSFETs is presented, providing a performance comparison between them. 1200 V-40 …
SiC MOSFETs is presented, providing a performance comparison between them. 1200 V-40 …
Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs
High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more
important as power electronics faces wider applications in harsh environments. In this paper …
important as power electronics faces wider applications in harsh environments. In this paper …
Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures
The over-current withstanding ability of the silicon carbide (SiC) based metal–
oxidesemiconductor field effect transistor (MOSFET) is really important for the survival during …
oxidesemiconductor field effect transistor (MOSFET) is really important for the survival during …