A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications
In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics
MC Lu - IEEE Transactions on Device and Materials Reliability, 2023 - ieeexplore.ieee.org
Wide bandgap power electronics have been commercialized for many applications. Gallium
nitride (GaN) high electron mobility transistor (HEMT) has superior performance in high …
nitride (GaN) high electron mobility transistor (HEMT) has superior performance in high …
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and …
In this simulation work, the effect of Al x Ga 1-x N and In x Ga 1-x N back barriers (BB) on the
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on …
The work function (φ m) of gate metal is crucial to electrical characteristics in standard GaN-
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …
Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics
GaN HEMTs (high-electron-mobility transistors) on SiC (silicon carbide) wafer with back
barrier structures have gained much attention owing to the improved sheet charge density …
barrier structures have gained much attention owing to the improved sheet charge density …
Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study
Y Cao, Q Guan, Y He, X Wang, L Zhang… - Journal of Physics D …, 2024 - iopscience.iop.org
In this study, we investigated the impact of strain on the electronic structure and polarization
of Al x Ga 1− x N and AlGaN/GaN heterojunctions using first-principles density functional …
of Al x Ga 1− x N and AlGaN/GaN heterojunctions using first-principles density functional …