Linear and nonlinear optical properties in spherical quantum dots: generalized Hulthén potential
In this work, we studied the optical properties of spherical quantum dots confined in Hulthén
potential with the appropriate centrifugal term included. The approximate solution of the …
potential with the appropriate centrifugal term included. The approximate solution of the …
Linear and nonlinear optical properties in spherical quantum dots: Manning-Rosen potential
In this work, we studied the optical properties of spherical quantum dots confined in Manning-
Rosen potential with the appropriate centrifugal term included. The approximate solution of …
Rosen potential with the appropriate centrifugal term included. The approximate solution of …
Investigation of the InAs/GaAs quantum dots' size: dependence on the strain reducing layer's position
This work reports on theoretical and experimental investigation of the impact of InAs
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …
Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V quantum dots
Abstract Impact of combinational (In 0.21 Al 0.21 Ga 0.58 As/In 0.15 Ga 0.85 As and In 0.15
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
InGaAsSb/GaAsSb quantum dot structures
This work studies the modal gain from I nx G a 1− x A sy S b 1− y/G a A s S b In_xGa_1-
xAs_ySb_1-y/GaAsSb quaternary quantum dots (QD) structures at different mole fractions of …
xAs_ySb_1-y/GaAsSb quaternary quantum dots (QD) structures at different mole fractions of …
Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm
A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs)
emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is …
emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is …
Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications
T Hidouri, R Hamila, I Fraj, F Saidi, H Maaref… - Superlattices and …, 2017 - Elsevier
In this paper, single quantum well (SQW) structure of B x In y Ga 1-xy As/GaAs lattice-
matched to GaAs has been grown by metal organic vapor phase epitaxy (MOVPE). The …
matched to GaAs has been grown by metal organic vapor phase epitaxy (MOVPE). The …
Electron-Related Properties in a GaAs/GaAlAs Ultra-thin Core/Shell Film through External Field direction for Energy and Photonic Devices
I Maouhoubi, R Boussetta, S Chouef… - Physica B: Condensed …, 2024 - Elsevier
In this paper, we investigate electron-related properties in GaAs/GaAlAs Ultra-thin
Core/Shell Film Quantum dot (UTFQD), examining the effects of external electric fields …
Core/Shell Film Quantum dot (UTFQD), examining the effects of external electric fields …
Carrier dynamics of strain-engineered InAs quantum dots with (In) GaAs surrounding material
The present study reports on the optical properties of epitaxially grown InAs quantum dots
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
Application of Optimised Nanocarbon Materials and Biofertilisers as a Potent Superfertiliser: Towards Sustainable Agriculture Production
MH Hadj Alouane, F Ahmed… - Science of Advanced …, 2021 - ingentaconnect.com
In this work, carbon-based nanomaterials including; carbon nanotubes (CNT) and graphene
were combined with biofertilisers and tested their impact on germination of Hordeum …
were combined with biofertilisers and tested their impact on germination of Hordeum …