Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile
material system with unique physical properties for a wide range of device applications. With …

Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic
chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this …

Semiconductor nanowires have many potential applications in nanoelectronic and nano-
optoelectronic devices owing to their unique physical properties,[1] which have drawn …

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer
defined by self-assembled diblock copolymer were performed by metal-organic chemical …

We describe the growth and characterization of InAs quantum dots (QDs) on a patterned
GaAs substrate using metalorganic chemical vapor deposition. The QDs nucleate on the …

We present a quantum dot (QD) fabrication method which allows for the definition of the
explicit location and size of an individual QD. We have obtained high optical quality, high …

We have developed a quantum-dot fabrication process which allows for explicit definition of
the location and lateral dimension of quantum dots using electron beam lithography and …

Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that
selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots …

Control over the location, distribution, and size of quantum dots is essential for the
engineering of next-generation semiconductor devices employing these remarkable …

We describe the growth and characterization of InAs quantum dots on SiO 2 patterned GaAs
by metal organic chemical vapor deposition. Arrays of quantum dots with densities as high …