CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …

In this paper, radio frequency (RF) stability performance of double gate junctionless
transistor for different spacer material, the width of spacer, and bias conditions is reported …

In this paper we investigate the impact of process parameter variations such as temperature
(T), channel doping concentration (ND), Fin height (H fin) and Fin width (W fin) on Radio …

Radio frequency (RF) stability is an indispensable selection component to operate the
device in RF range. An unstable device is susceptible to oscillating for any passive …

This paper presents RF stability of FinFET at particular bias and geometry conditions. The
article provides guideline for optimizing the FinFET at RF range. The FinFET geometrical …

This paper presents the impact of parameter fluctuation due to process variation on radio
frequency (RF) stability performance of double gate tunnel FET (DG TFET). The influence of …

This paper investigates the RF Stability performance of the Double Gate Junctionless Tunnel
Field Effect Transistor (DGJL-TFET). The impact of the geometrical parameter, material and …

This article presents the bias and geometry optimization procedure for the radio frequency
(RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor …

This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate
engineering is process of implementing different materials with different work functions on …

This paper presents comparative study on radio frequency (RF) stability performance of
Double Gate MOSFET (DG-MOSFET) and Double Gate Tunnel FET (DG-TFET). A non-quasi …