Stacks consisting of an ultrathin SiO 2 coated with atomic-layer deposited (ALD) zinc oxide
(ZnO) and aluminum oxide (Al 2 O 3) have been shown to yield state-of-the-art passivation …

Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

Quantification of Auger recombination in crystalline silicon is usually challenging because it
requires distinguishing Auger recombination from extrinsic recombination processes …

Surface passivation of germanium is vital for optimal performance of Ge based
optoelectronic devices especially considering their rapidly increasing surface-to-volume …

Passivation of germanium surfaces is vital for the application of germanium in next-
generation electronic and photonic devices. In this work, it is demonstrated that stacks of …

Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and
thereby enhance the device performance of solar cells and other semiconductor devices …

Recently, stacks consisting of an ultrathin SiO 2 coated with atomic-layer-deposited (ALD) Al-
doped zinc oxide (ZnO: Al) have been shown to yield state-of-the-art passivation of n-type …

In recent years, passivating contacts based on SiO 2/poly-Si have proven to be an enabling
technology for Si solar cells. Effective hydrogenation of the interfacial SiO 2 is vital for …

Phosphorus oxide (PO x) capped by aluminum oxide (Al2O3) has recently been discovered
to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into …

Surface passivation is a crucial factor in improving the efficiency of c-Si solar cells. In this
work, we develop a boron oxide/aluminum oxide stack (BO x/Al 2 O 3) using the atomic layer …