The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

Multidimensional power devices can achieve performance beyond conventional limits by
deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in …

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-
aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type …

This Letter demonstrates a high-performance 3.3 kV-class β-Ga 2 O 3 vertical heterojunction
diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β …

Deep mesa is an effective edge termination widely deployed in high-voltage power devices.
However, its effectiveness requires the minimal distance between mesa and electrode edge …

In this work, we present a concept that leverages the strong piezoelectric polarization field in
InGaN, which counteracts the external electric field at reverse bias. We show that despite the …

Selective-area p-type doping has been regarded as one of the primary challenges in vertical
GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type …

In this letter, we report on a quasi–vertical GaN-based metal–insulator–semiconductor (MIS)
Schottky barrier diode (SBD) with an insertion of 2 nm thick Al 2 O 3 dielectric layer. It shows …

Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …

We report on fully vertical gallium nitride (GaN)-on-silicon (Si) pin diodes delivering above
1200-V soft breakdown voltage (BV). Temperature dependence measurements indicate …