THz monolithic integrated circuits using InP high electron mobility transistors
W Deal, XB Mei, KMKH Leong… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
In this paper, background describing THz monolithic integrated circuits using InP HEMT is
presented. This three-terminal transistor technology has been used to realize amplifiers …
presented. This three-terminal transistor technology has been used to realize amplifiers …
Broadband balanced frequency doublers with fundamental rejection enhancement using a novel compensated Marchand balun
PH Tsai, YH Lin, JL Kuo, ZM Tsai… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, a novel compensation technique is proposed to improve the imbalance of a
Marchand balun due to the unequal odd-and even-mode phase velocities of the coupled …
Marchand balun due to the unequal odd-and even-mode phase velocities of the coupled …
A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
A wideband frequency multiplier that effectively generates and combines the even
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
A 94 GHz 3D image radar engine with 4TX/4RX beamforming scan technique in 65 nm CMOS technology
This paper presents a fully-integrated 3D image radar engine utilizing beamforming for
electrical scanning and precise ranging technique for distance measurement. Four …
electrical scanning and precise ranging technique for distance measurement. Four …
Single-chip frequency multiplier chains for millimeter-wave signal generation
M Abbasi, R Kozhuharov, C Karnfelt… - IEEE Transactions …, 2009 - ieeexplore.ieee.org
Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies
are presented. The chips are fabricated in a 0.1¿ m GaAs metamorphic high electron …
are presented. The chips are fabricated in a 0.1¿ m GaAs metamorphic high electron …
A 220 GHz single-chip receiver MMIC with integrated antenna
SE Gunnarsson, N Wadefalk, J Svedin… - IEEE Microwave and …, 2008 - ieeexplore.ieee.org
This letter presents the design and characterization of a 220 GHz microstrip single-chip
receiver monolithic microwave integrated circuit (MMIC) with an integrated antenna in a 0.1 …
receiver monolithic microwave integrated circuit (MMIC) with an integrated antenna in a 0.1 …
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax= 415 GHz
LD Wang, P Ding, YB Su, J Chen, BC Zhang… - Chinese Physics …, 2014 - iopscience.iop.org
InAlAs/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-
balanced cutoff frequency f T and maximum oscillation frequency f max are reported. An …
balanced cutoff frequency f T and maximum oscillation frequency f max are reported. An …
A 60-GHz frequency tripler with gain and dynamic-range enhancement
In this paper, a single-stage 60-GHz frequency tripler is presented with-1.1-dB conversion
gain in a 0.15-μm pseudomorphic HEMT process. When the input power backs off, unlike …
gain in a 0.15-μm pseudomorphic HEMT process. When the input power backs off, unlike …
A W-Band 12 Multiplier MMIC With Excellent Spurious Suppression
This letter presents a single chip× 12 frequency multiplier MMIC for the W-band that is
realized in a 100 nm metamorphic HEMT technology. To obtain the× 12 multiplication factor …
realized in a 100 nm metamorphic HEMT technology. To obtain the× 12 multiplication factor …
A high power-efficiency D-band frequency tripler MMIC with gain up to 7 dB
A novel frequency tripler consisting of a harmonics generating stage and a converting stage
is proposed. A common-emitter transistor in the first stage is used to produce mainly the first …
is proposed. A common-emitter transistor in the first stage is used to produce mainly the first …